Hydrogen effusion from tritiated amorphous silicon
نویسندگان
چکیده
منابع مشابه
Tritiated Amorphous Silicon Betavoltaic Devices
When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...
متن کاملInfrared vibration spectra of hydrogenated, deuterated, and tritiated amorphous silicon
This article presents infrared absorption data of amorphous silicon alloys in which the hydrogen isotopes deuterium and tritium have been substituted for hydrogen. Silicon–deuterium and silicon– tritium vibration frequencies are related to silicon–hydrogen vibration frequencies by simple mass relationships. The silicon–deuterium wagging vibration is broadened and blueshifted due to strong coupl...
متن کاملThermal Desorption Spectroscopy of Hydrogen from Amorphous Hydrogenated Silicon
T h e r m a l desorption spectroscopy (TDS) based on the mass spectroscopy of thermal ly evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the T D S method . Cons tan t t e m p e r a t u r e growth ra te enabled to determine t empera tu re regions of hydrogen evolution a...
متن کاملLuminescence from amorphous silicon nanostructures.
We present a model of size-dependent luminescence from a-Si:H and show that a blueshift of the luminescence energy and a general increase in luminescence quantum efficiency are predicted as structure size decreases. In contrast to bulk a-Si:H structures, highly confined a-Si:H exhibits visible luminescence peak energies and high radiative quantum efficiency at room temperature, which is insensi...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2008
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2831495